SiC HPD
PowerX HPD is a 6-in-1 (three-phase) SiC MOSFET power module. It integrates high performance SiC MOSFET chips for xEV or motor drives application.
Key Features:
⏹ VDSS = 1200 V
⏹ RDS(on), Typ. = 2.10 mΩ
⏹ ID nom = 570 A
⏹ Low FOM(Qg*RDSON)
⏹ Low stray inductance = 8.5nH(typ.)
⏹ 175°C maximum junction temperature
⏹ Direct cooled Cu pin fin baseplate
⏹ High reliability (SiC sintered to Si3N4 AMB)
⏹ Integrated NTC temperature sensor
⏹ Press FIT Contact Technology
⏹ RoHS Compliant and Halogen Free